PART |
Description |
Maker |
KM641003A |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
AT27BV020-90VI AT27BV020-90VC AT27BV020-90TI AT27B |
High Speed CMOS Logic Octal D-Type Flip-Flops with Data Enable 20-SOIC -55 to 125 256K X 8 OTPROM, 90 ns, PDSO32 High Speed CMOS Logic Octal D-Type Flip-Flops with Data Enable 20-PDIP -55 to 125 256K X 8 OTPROM, 90 ns, PQCC32 High Speed CMOS Logic Octal Positive-Edge-Triggered D-Type Flip-Flops with 3-State Outputs 20-SOIC -55 to 125 256K X 8 OTPROM, 90 ns, PBGA42 High Speed CMOS Logic Octal Positive-Edge-Triggered D-Type Flip-Flops with 3-State Outputs 20-SOIC -55 to 125 256K X 8 OTPROM, 150 ns, PDSO32 2-Megabit 256K x 8 Unregulated Battery-Voltage High Speed OTP EPROM
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
|
K6R1004C1D K6R1004C1D-JC12 |
256K X 4 STANDARD SRAM, 12 ns, PDSO32 256K x 4 Bit (with /OE) High-Speed CMOS Static RAM Data Sheet
|
Samsung Electronic
|
V53C8256H35 |
ULTRA-HIGH SPEED, 256K X 8 FAST PAGE MODE CMOS DYNAMIC RAM 超高速,256K × 8快速页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
CXK77B1841GB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (256K x 18Bit)(4M位、写延迟LVTTL高速同步静态RAM (256K x 18) 4Mb的后写入LVTTL高速同步SRAM56 × 18位)分位,写延迟LVTTL高速同步静态随机存储器56 × 18位)
|
Sony, Corp.
|
IDT70V631S12BC IDT70V631S15PRFI IDT70V631S10BCI |
HIGH-SPEED 3.3V 256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA256 HIGH-SPEED 3.3V 256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM 256K X 18 DUAL-PORT SRAM, 15 ns, PQFP128
|
Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
|
HM6207H |
256K High Speed SRAM
|
Hitachi
|
EDI8833P EDI8833C EDI8833LP |
HIGH SPEED 256K MONOLITHIC SRAM
|
Electronic Theatre Controls, Inc. ETC[ETC]
|
IS61LV2568-10KI IS61LV2568-10TI IS61LV256803 IS61L |
256K x 8 HIGH-SPEED CMOS STATIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
FTC41041-20JILF FTC41041-15JILF FTC41041-12JILF FT |
HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM
|
Force Technologies Ltd
|